EPITAXIAL TRANSISTOR. 2SA1650 Datasheet

2SA1650 Datasheet PDF


Part Number

2SA1650

Description

PNP SILICON EPITAXIAL TRANSISTOR

Manufacture

NEC

Total Page 6 Pages
PDF Download
Download 2SA1650 Datasheet PDF


2SA1650
DATA SHEET
SILICON POWER TRANSISTOR
2SA1650
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1650 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation. This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Fast switching speed
• Low collector-to-emitter saturation voltage:
VCE(sat) ≤ −0.3 V (MAX.) @IC = 3 A
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
Electrode Connection
<1> Base
<2> Collector
<3> Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ID(DC)
IC(pulse)
IB(DC)
PT
PT
Tj
Tstg
Conditions
PW 300 µs, duty cycle 10%
Tc = 25°C
Ta = 25°C
Ratings
150
100
7.0
5.0
10
2.5
25
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16122EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002

2SA1650
2SA1650
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 100 V, IE = 0
Emitter cutoff current
IEBO VEB = 5 V, IC = 0
DC current gain
hFE1* VCE = 2 V, IC = 0.5 A
DC current gain
hFE2* VCE = 2 V, IC = 1 A
DC current gain
hFE3* VCE = 2 V, IC = 3 A
Collector saturation voltage VCE(sat)1* IC = 3 A, IB = 0.15 A
Collector saturation voltage VCE(sat)2* IC = 4 A, IB = 0.2 A
Base saturation voltage
VBE(sat)1* IC = 3 A, IB = 0.15 A
Base saturation voltage
VBE(sat)2* IC = 4 A, IB = 0.2 A
Gain bandwidth product
fT VCE = 10 V, IC = 0.5 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
Storage time
Fall time
ton IC = 3 A, IB1 = IB2 = 0.15 A,
tstg RL = 10 , VCC = 50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME TEST CIRCUIT
MIN.
100
100
60
TYP.
150
130
0.3
1.5
0.4
MAX.
10
10
400
0.3
0.5
1.2
1.5
Unit
µA
µA
V
V
V
V
MHz
pF
µs
µs
µs
Base current
waveform
Collector current
waveform
2 Data Sheet D16122EJ1V0DS


Features DATA SHEET SILICON POWER TRANSISTOR 2SA1 650 PNP SILICON EPITAXIAL TRANSISTOR FO R HIGH-SPEED SWITCHING The 2SA1650 is a mold power transistor developed for h ighspeed switching and features a very low collector-to-emitter saturation. Th is transistor is ideal for use in switc hing power supplies, DC/DC converters, motor drivers, solenoid drivers, and ot her low-voltage power supply devices, a s well as for high-current switching. PACKAGE DRAWING (UNIT: mm) FEATURES Mold package that does not require an insulating board or insulation bushing • Fast switching speed • Low colle ctor-to-emitter saturation voltage: VCE (sat) ≤ −0.3 V (MAX.) @IC = −3 A QUALITY GRADES • Standard Please ref er to “Quality Grades on NEC Semicond uctor Devices” (Document No. C11531E) published by NEC Corporation to know t he specification of quality grade on th e devices and its recommended applicati ons. Electrode Connection <1> Base <2> Collector <3> Emitter ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector.
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