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2SA1962 Datasheet

Part Number 2SA1962
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description POWER TRANSISTOR
Datasheet 2SA1962 Datasheet2SA1962 Datasheet (PDF)

www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5242 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage .

  2SA1962   2SA1962






Part Number 2SA1962
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon PNP Transistor
Datasheet 2SA1962 Datasheet2SA1962 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications 2SA1962 Unit: mm • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO −230 V Collector-emitter voltage V CEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.

  2SA1962   2SA1962







Part Number 2SA1962
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SA1962 Datasheet2SA1962 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5242 ·High collector voltage: VCEO=-230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO V.

  2SA1962   2SA1962







Part Number 2SA1962
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Datasheet 2SA1962 Datasheet2SA1962 Datasheet (PDF)

2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SC5242/FJA4313. Thermal and electrical Spice models are available.

  2SA1962   2SA1962







POWER TRANSISTOR

www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5242 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -1.5 A PC 130 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1962 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -230 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A B -3.0 V VBE(on) Base-Emitter On Voltage IC= -7A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -230V ; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -7A ; VCE= -5V 35 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 360 pF fT Current-Gain.


2011-07-04 : 2SA1186    2SA1185    2SA1184    2SA1180    2SA1170    2SA1169    2SA1166    2SA1147    2SA1146    2SA1142   


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