2SA1965-S

Ordering number : ENA1085 2SA1965-S SANYO Semiconductors DATA SHEET 2SA1965-S PNP Epitaxial Planar Silicon Transistor Muting Circuit Applications Features Ultrasmall-sized package permitting applied sets to be made small and slim. Small output capacitance. Low collector-to-emitter saturation voltage. Low ON resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Marking : KA Symbol ICBO IEBO hFE fT Cob Conditions VCB=--12V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--5mA VCE=--5V, IC=--10mA VCB=--10V, f=1MHz Ratings --15 --10 --5 --100 --200 --20 150 150 --55 to +150 Unit V V V mA mA mA mW °C °C min 200 Ratings typ max Unit --0.1 μA --0.1 μA 600 600 MHz 5.0 pF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special appl...