2SA2047

2SA2047 Transistor Medium power transistor (−30V, −0.5A) 2SA2047 !Features 1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5729 !External dimensions (Units : mm) 0.65 0.65 0.7 UMT3 0.3 (3) (1) 1.25 0.2 2.1 0.15 (2) (1)Emitter (2)Base (3)Collector 0.1Min. Each lead has same dimensions Abbreviated symbol : UV !Applications Small signal low frequency amplifier High speed switching !Structure PNP Silicon epitaxial planar transistor !Packaging specifications Package Type 2SA2047 Code Basic ordering unit (pieces) Taping T106 3000 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current ICP Power dissipation PC Junction temperature Tj Range of storage temperature Tstg ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land Limits −30 −30 −6 −0.5 −1.0 200 150 −55~+150 Unit V V V A A ∗1 mW ∗2 °C °C 0.9 1.3 2.0 1/3 Free Datasheet http://www.datasheet4u.com/ 2SA2047 Transistor !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. BVCBO −30 − Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO −30 − Emitter-base breakdown voltage BVEBO −6 − − − ICBO Collector cut-off current IEBO − − Emitter cut-off current − −150 Collector-emitter saturation voltage VCE...