2SA2192

www.DataSheet4U.com Ordering number : ENA0307 2SA2192 SANYO Semiconductors DATA SHEET 2SA2192 Applications PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C PW≤100µs Conditions Ratings --50 --50 --50 --8 --10 --13 --2 0.95 20 150 --55 to +150 Unit V V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=-40V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--1A VCE=-5V, IC=--1A VCB=-10V, f=1MHz IC=--5A, IB=--250mA IC=--5A, IB=--250mA 200 130 90 --290 --0.93 --580 --1.4 Ratings min typ max --10 --10 560 MHz pF mV V Unit µA µA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely...