2SA562TM

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm · Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA · 1 watt amplifier application. · Complementary to 2SC1959. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -35 -30 -5 -500 -100 500 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = -35 V, IE = 0 IEBO VEB = -5 V, IC = 0 hFE (1) VCE = -1 V, IC = -100 mA (Note) hFE (2) VCE = -6 V, IC = -400 mA (Note) VCE (sat) VBE fT Cob IC = -100 mA, IB = -10 mA VCE = -1 V, IC = -100 mA VCE = -6 V, IC = -20 mA VCB = -6 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 70~140, Y: 120~240 hFE (2) classification O: 25 (min), Y: 40 (min) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max Unit ¾ ¾ -0.1 mA ¾ ¾ -0.1 mA 70 ¾ 240 25 ¾ ¾ ¾ -0.1 -0.25 V ¾ -0.8 -1.0 V ¾ 200 ¾ MHz ¾ 13 ¾ pF 1 2003-03-27 2SA562TM 2 2003...