isc Silicon PNP Power Transistor
2SA614
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -55V (Min.) ·Col...
isc Silicon PNP Power Transistor
2SA614
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation-
: PC= 25W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-80
V
VCEO Collector-Emitter
Voltage
-55
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-3
A
PC
Collector Power Dissipation
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -10mA; IB= 0
V(BR)CBO Collector-Base Breakdown
Voltage
IC= -500μA; IE= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -500μA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -1A; IB= -0.1A
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -5V
2SA614
MIN TYP. MAX UNIT
-55
V
-80
V
-5
V
-0.5
V
-50 μA
-50 μA
40
240
hFE Classifications
R
O
Y
40-80 70-140 120-240
NOTICE: ISC reserves the rights to make changes of...