Transistors. 2SA653 Datasheet

2SA653 Datasheet PDF

Part 2SA653
Description Silicon POwer Transistors
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SA653 Datasheet

SavantIC Semiconductor www.DataSheet4U.com Product Specific 2SA653 Datasheet
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emi 2SA653 Datasheet




2SA653
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION
·With TO-66 package
·High voltage: VCEO=-120V(min)
APPLICATIONS
·Low frequency power amplifier color TV
vertical deflection output applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SA653
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-150
-120
-6
-1.0
15
150
-55~150
UNIT
V
V
V
A
W



2SA653
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBEsat
Base-emitter saturation voltage
IC=-0.5A; IB=-50mA
ICBO Collector cut-off current
VCB=-150V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-0.2A ; VCE=-5V
fT Transition frequency
IC=-0.1A ; VCE=-10V
Product Specification
2SA653
MIN TYP. MAX UNIT
-120
V
-150
V
-1.5 V
-2.0 V
-10 µA
-10 µA
40
15 MHz
2




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