2SA744

isc Silicon PNP Power Transistor 2SA744 DESCRIPTION ·High Power Dissipation- : PC= 70W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Complement to Type 2SC1402 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -3 A 70 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A ; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 2SA744 MIN TYP. MAX UNIT -80 V -1.5 V -1.0 mA -1.0 mA 30 15 MHz Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the appli...