isc Silicon PNP Power Transistor
DESCRIPTION ·High Power Dissipation-
: PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdo...
isc Silicon PNP Power Transistor
DESCRIPTION ·High Power Dissipation-
: PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -60V(Min.) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-60
V
VCEO Collector-Emitter
Voltage
-60
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-3
A
50
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
2SA807
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2SA807
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -3A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -3A; VCE= -4V
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -12V
Switching times
MIN TYP. MAX UNIT
-60
V
-1.5 V
-1.0 mA
-1.0 mA
20
10
MHz
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= -3A ,RL= 3Ω, VCC= -10V IB1= -0.3A; IB2= 50mA
1.2
μs
1.8
μs
0.3
μs
Notice: ISC reserves the rights to make changes of the content herein the datash...