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2SA812 Datasheet

Part Number 2SA812
Manufacturers NEC
Logo NEC
Description PNP Transistor
Datasheet 2SA812 Datasheet2SA812 Datasheet (PDF)

DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50 V Emitter to Base Voltage VEBO −5.0 V Collector Current (DC) IC −100 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 °C Storage.

  2SA812   2SA812






Part Number 2SA812
Manufacturers JCET
Logo JCET
Description PNP Transistor
Datasheet 2SA812 Datasheet2SA812 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 TRANSISTOR (PNP) FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mm MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dis.

  2SA812   2SA812







Part Number 2SA812
Manufacturers GME
Logo GME
Description Silicon Epitaxial Planar Transistor
Datasheet 2SA812 Datasheet2SA812 Datasheet (PDF)

Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) z High Voltage: VCEO=-50V. Pb Lead-free 2SA812 APPLICATIONS z Audio frequency, general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SA812 M4/M5/M6/M7 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Volta.

  2SA812   2SA812







Part Number 2SA812
Manufacturers WEITRON
Logo WEITRON
Description PNP Transistor
Datasheet 2SA812 Datasheet2SA812 Datasheet (PDF)

PNP General Purpose Transistors P b Lead(Pb)-Free 2SA812 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -60 -50 -5.0 -100 200 +150 -55 to +150 Unit V V V mA mW °C °C WEITRON http://www.weitron.com.tw 1/3 08-Dec-06 2SA812 ELECTRICAL CHARACTERISTICS Characteristics Collecto.

  2SA812   2SA812







Part Number 2SA812
Manufacturers Kexin
Logo Kexin
Description PNP Transistors
Datasheet 2SA812 Datasheet2SA812 Datasheet (PDF)

SMD Type Transistors PNP Transistors 2SA812 Features High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) powe.

  2SA812   2SA812







Part Number 2SA812
Manufacturers DC COMPONENTS
Logo DC COMPONENTS
Description PNP Transistor
Datasheet 2SA812 Datasheet2SA812 Datasheet (PDF)

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA812 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. Pinning 1 = Base 2 = Emitter 3 = Collector .020(0.50) .012(0.30) SOT-23 3 .063(1.60) .108(0.65) .055(1.40) .089(0.25) 12 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage.

  2SA812   2SA812







PNP Transistor

DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50 V Emitter to Base Voltage VEBO −5.0 V Collector Current (DC) IC −100 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 °C Storage Temperature Range Tstg −55 to +150 °C PACKAGE DRAWING (Unit: mm) ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Saturation Voltage Base to Emitter Voltage Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO hFE VCE(sat) VBE fT Cob MIN. 90 −0.58 Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2% TYP. 200 −0.18 −0.62 180 4.5 MAX. −0.1 −0.1 600 −0.3 −0.68 hFE CLASSIFICATION Marking hFE M4 90 to 180 M5 135 to 270 M6 200 to 400 M7 300 to 600 UNIT μA μA V V MHz pF 1. Emitter 2. Base 3. Collector TEST CONDITIONS VCB = −60 V, IE = 0 A VEB = −5.0 V, IC = 0 A VCE = −6.0 V, IC = −1.0 mANote IC = −100 mA, IB = −10 mA VCE = 6.0 V, IC = −1.0 mA VCE = −6.0 V, IE = 10 mA VCB = −10 V, IE = 0 A, f = 1.0 MHz The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every co.


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