| DatasheetsPDF.com |
2SA843 Transistor Datasheet PDFSilicon PNP Power Transistor Silicon PNP Power Transistor |
| Part Number | 2SA843 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 60-200@ IC= -0.4A ·Complement to Type 2SC1683 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A ICM Collector Current-Peak PC Total Power Dissipation. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part Number | 2SA843 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 60-200@ IC= -0.4A ·Complement to Type 2SC1683 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A ICM Collector Current-Peak PC Total Power Dissipation. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part Number | 2SA843 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min) ·DC Current Gain
: hFE= 60-200@ IC= -0. 4A ·Complement to Type 2SC1683 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0. 5 A ICM Collector Current-Peak PC Total Power Dissipation. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part Number | 2SA843 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min) ·DC Current Gain
: hFE= 60-200@ IC= -0. 4A ·Complement to Type 2SC1683 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0. 5 A ICM Collector Current-Peak PC Total Power Dissipation. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
|
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |