2SAR514PFRA

2SAR514P FRA Middle Power Transistor (-80V / -0.7A) Parameter VCEO IC Value -80V -0.7A lFeatures 1)Low saturation voltage 　VCE(sat) =-400mV (Max.) 　 (IC/ IB=-300mA/-15mA) 2)High speed switching lOutline 　 SOT-89 　 SC-62 MPT3 lInner circuit Datasheet AEC-Q101 Qualified 　 　 　 　 　 lApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifications Part No. Package 2SAR514P FRA SOT-89 (MPT3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 4540 T100 180 12 1000 MD 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/6 20160920 - Rev.001 2SAR514P FRA 　 　 　 　　 　 　 　 　 　 　 　 　 　 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP*1 PD*2 PD*3 Tj Tstg Values -80 -80 -6 -0.7 -1.4 0.5 2.0 150 -55 to +150 Unit V V V A A W W ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Symbol Conditions BVCBO IC = -100μA BVCEO IC = -1mA BVEBO IE = -100μA ICBO VCB = -80V IEBO VEB = ...