2SB1002
Silicon PNP Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SD1368
Outline
UP...
2SB1002
Silicon PNP Epitaxial
Application
Low frequency power amplifier Complementary pair with 2SD1368
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
2SB1002
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) * PC * Tj Tstg
2 1
Ratings –70 –50 –6 –1 –1.5 1 150 –55 to +150
Unit V V V A A W °C °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown
voltage Collector to emitter breakdown
voltage Emitter to base breakdown
voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Gain bandwidth product Collector output capacitance Note: Mark hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE*
1
Min –70 –50 –6 — — 100 — — — —
Typ — — — — — — — — 150 35
Max — — — –0.1 –0.1 320 –0.6 –1.2 — —
Unit V V V µA µA
Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VEB = –4 V, IC = 0 VCE = –2 V, IC = –0.1 A
VCE(sat) VBE(sat) fT Cob
V V MHz pF
I C = –1 A, I B = –0.1 A (Pulse test) I C = –1 A, I B = –0.1 A (Pulse test) VCE = –2 V, I C = –10 mA (Pulse test) VCB = –10 V, I...