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2SB1075 Datasheet

Part Number 2SB1075
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB1075 Datasheet2SB1075 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max.)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emi.

  2SB1075   2SB1075






Part Number 2SB1075
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB1075 Datasheet2SB1075 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1075 DESCRIPTION ·With TO-126 package ·High collector-peak current ·Low collector saturation voltage APPLICATIONS ·For audio frequency output amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage.

  2SB1075   2SB1075







PNP Transistor

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max.)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -4 A 1.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1075 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -2mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A* VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -50V; IE= 0 ICEO Collector Cutoff Current VCE= -10V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V COB Output Capacitance IE=0; VCB.


2020-09-17 : BD745A    BD746    BD746B    BD746A    2SB691    2SB690    2SB686    2SB689    2SB683    2SB682   


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