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2SB1087 Datasheet

Part Number 2SB1087
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB1087 Datasheet2SB1087 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1087 DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and low speed power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curre.

  2SB1087   2SB1087






Part Number 2SB1087
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB1087 Datasheet2SB1087 Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -.

  2SB1087   2SB1087







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1087 DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and low speed power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -5 1.5 W UNIT V V V A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-30mA, IB=0 IC=-2A ,IB=-2mA IC=-2A ,IB=-2mA VCB=-100V, IE=0 VEB=-5V; IC=0 IC=-2A , VCE=-5V IC=-5A , VCE=-5V 2000 500 MIN -100 2SB1087 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V -1.5 -2.0 1 -3 20000 V V µA mA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1087 Fig.2 Outline dimensions 3 .


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