2SB1098

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE=2000(Min)@ (VCE= -2V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low speed switching industrial ·Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature -100 V -100 V -7 V -5 A -8 A -0.5 A 2 W 20 150 ℃ -55~150 ℃ 2SB1098 isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1098 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -100μA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -3mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -3mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE -1 DC Current Gain IC= -3A; VCE= -2V hFE -2 DC Current Gain IC= -5A; VCE= -2V MIN TYP. MAX UNIT -100 V -100 V -1.5 V -2.0 V -10 μA ...