2SB1109, 2SB1110
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SD1609...
2SB1109, 2SB1110
Silicon PNP Epitaxial
Application
Low frequency high
voltage amplifier complementary pair with 2SD1609 and 2SD1610
Outline
TO-126 MOD
123
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
1. Emitter 2. Collector 3. Base
Ratings 2SB1109 –160 –160 –5 –100 1.25 150 –45 to +150
2SB1110 –200 –200 –5 –100 1.25 150 –45 to +150
Unit V V V mA W °C °C
2SB1109, 2SB1110
Electrical Characteristics (Ta = 25°C)
2SB1109
2SB1110
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–160 —
—
–200 —
—V
IC = –10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
–160 —
—
–200 —
—V
IC = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO –5 — — –5 — — V
IE = –10 µA, IC = 0
Collector cutoff current ICBO
DC current tarnsfer ratio
h *1 FE1
— — –10 — — — µA VCB = –140 V, IE = 0
— — — — — –10 µA VCE = –160 V, IE = 0
60 — 320 60 — 320
VCE = –5 V, IC = –10 mA
hFE2
Base to emitter
voltage VBE
Collector to emitter saturation
voltage
VCE(sat)
30 — — 30 — — — — –1.5 — — –1.5 V — — –2 — — –2 V
VCE = –5 V, IC = –1 mA
IC = –5 V, IC = –10 mA
IC = –30 mA, IB = –3 mA
Gain bandwidth product fT
— 140 — — 140 — MHz VCE = –5 V, IC = –10 mA
Collector output capacitance
Cob — 5.5 — — 5.5 — pF VCB = –10 V...