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2SB1160 Datasheet

Part Number 2SB1160
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB1160 Datasheet2SB1160 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1715 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curr.

  2SB1160   2SB1160






Part Number 2SB1160
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB1160 Datasheet2SB1160 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SB1160 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1715 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emit.

  2SB1160   2SB1160







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1715 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -9 -15 100 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-7A ;IB=-0.7A IC=-7A ; VCE=-5V VCB=-150V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 60 20 MIN 2SB1160 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT TYP. MAX -2.0 -1.8 -50 -50 UNIT V V µA µA 200 330 20 pF MHz hFE-2 classifications Q 60-120 S 80-160 P 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product .


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