2SB1165

Part Number	2SB1165
Manufacturer	INCHANGE
Title	PNP Transistor
Description	·Low Collector Saturation Voltage- : VCE(sat)= -0.55V(Max)@IC= -3A ·High fT ·Good Linearity of hFE ·Fast switching time ·Complement to Type 2SD172...
Features	BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA, RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC=-0.1mA; IE=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB...
Datasheet	2SB1165 pdf datasheet

Part Number	2SB1165
Manufacturer	Sanyo Semicon Device
Title	PNP Transistor
Description	Ordering number:2046A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1165/2SD1722 50V/5A Switching Applications Applications · Relay drivers, h.
Features	· Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switching time. Package Dimensions unit:mm 2043A [2SB1165/2SD1722] ( ) : 2SB1165 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage E.
Datasheet	2SB1165 pdf datasheet

Part Number	2SB1165
Manufacturer	SavantIC
Title	SILICON POWER TRANSISTOR
Description	·With TO-126 package ·Complement to type 2SD1722 ·Low collector saturation voltage ·Fast switching time APPLICATIONS ·For use in relay drivers,hig.
Features	se breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA ;RBE=; IC=-10µA ;IE=0 IE=-10µA ;IC=0 IC=-3A; IB=-0.15A IC=-.
Datasheet	2SB1165 pdf datasheet