2SB1190

isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD1770 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 25 W 1.4 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1190 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -0.3A; VCE= -10V ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -10V hFE-2 DC Current Gain IC= -0.3A; VCE= -10V  hFE-1 Classifications Q P 60-140 100-240 2SB1190 MIN TYP. MAX UNIT -150 V -6 V -1.0 V -1.0 ...