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2SB1192 Datasheet

Part Number 2SB1192
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB1192 Datasheet2SB1192 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1192 DESCRIPTION ·With TO-220Fa package ·High VCEO ·Large PC ·Complement to type 2SD1770 APPLICATIONS ·Power amplifier ·TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Co.

  2SB1192   2SB1192






Part Number 2SB1192
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB1192 Datasheet2SB1192 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SB1192 DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD1772 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO .

  2SB1192   2SB1192







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1192 DESCRIPTION ·With TO-220Fa package ·High VCEO ·Large PC ·Complement to type 2SD1770 APPLICATIONS ·Power amplifier ·TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -6 -1 -2 2 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5mA , B=0 IE=-0.5mA ,IC=0 IC=-500mA; IB=-50mA IC=-300mA ; VCE=-10V VCB=-200V; IE=0 VEB=-4V; IC=0 IC=-100mA ; VCE=-10V IC=-300mA ; VCE=-10V IE=0 ; VCB=-10V,f=1MHz IC=-100mA ; VCE=-10V 60 50 MIN -150 -6 2SB1192 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V -1.0 -1.0 -50 -50 240 V V µA µA 35 20 pF MHz hFE-1 Classifications Q 60-140 P 100-240 .


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