DatasheetsPDF.com

2SB1218A Datasheet

Part Number 2SB1218A
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP Transistor
Datasheet 2SB1218A Datasheet2SB1218A Datasheet (PDF)

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A 2.1±0.1 Unit: mm s Features q q 0.425 1.25±0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage .

  2SB1218A   2SB1218A






Part Number 2SB1218A
Manufacturers SeCoS
Logo SeCoS
Description PNP Silicon Epitaxial Paner Transistors
Datasheet 2SB1218A Datasheet2SB1218A Datasheet (PDF)

2SB1218A Elektronische Bauelemente -0.1A , -60V PNP Silicon Epitaxial Paner Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free APPLICATIONS  General Purpose Amplification A L 3 SOT-323 FEATURES   3 High DC Current Gain Complementary to 2SD1819A K Top View 1 2 C B 1 2 E D CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1218A-Q 160~260 BQ1 2SB1218A-R 210~340 BR1 2SB1218A-S 290~460 BS1 REF. A B C D E F G Millimeter Min. Max. 1.80 2.20 1.80 1.15 0.8.

  2SB1218A   2SB1218A







Part Number 2SB1218A
Manufacturers GME
Logo GME
Description PNP Silicon Transistor
Datasheet 2SB1218A Datasheet2SB1218A Datasheet (PDF)

PNP Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE  Excellent HFE Linearity.  Complements the 2SD1819A. Pb Lead-free APPLICATIONS  For general purpose amplification. Production specification 2SB1218A ORDERING INFORMATION Type No. Marking 2SB1218A BQ/BR/BS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emit.

  2SB1218A   2SB1218A







Part Number 2SB1218A
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon PNP transistor
Datasheet 2SB1218A Datasheet2SB1218A Datasheet (PDF)

2SB1218A Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 PNP 。Silicon PNP transistor in a SOT-323 Plastic Package.  / Features , 2SD1819A 。 High hFE, complements the 2SD1819A. / Applications 。 General amplification. / Equivalent Circuit / Pinning 3 21 PIN1:Emitter PIN 2:Base PIN 3:Collector / Marking hFE Classifications Symbol hFE Range Marking Q 160~260 BHQ R 210~340 BHR S 290~460 BHS http://www.fsbrec.com 1/6 2SB1218A Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=2.

  2SB1218A   2SB1218A







Part Number 2SB1218A
Manufacturers TRANSYS Electronics
Logo TRANSYS Electronics
Description PNP Transistor
Datasheet 2SB1218A Datasheet2SB1218A Datasheet (PDF)

Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SB1218A FEATURES Power dissipation PCM: TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF w.DataSheet4U.com 150 mW (Tamb=25℃) 2. 30¡ À0. 05 Collector current -100 mA ICM: Collector-base voltage -45 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown vol.

  2SB1218A   2SB1218A







Part Number 2SB1218A
Manufacturers Jin Yu Semiconductor
Logo Jin Yu Semiconductor
Description PNP Transistor
Datasheet 2SB1218A Datasheet2SB1218A Datasheet (PDF)

2SB1 21 8 A TRANSISTOR(PNP) FEATURES  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -45 -45 -7 -100 150 833 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃.

  2SB1218A   2SB1218A







Silicon PNP Transistor

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A 2.1±0.1 Unit: mm s Features q q 0.425 1.25±0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 0.9±0.1 –45 –45 –7 –200 –100 150 150 –55 ~ +150 V V V mA mA mW ˚C ˚C 0.7±0.1 Ratings Unit 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S-Mini Type Package Marking symbol : B s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = –20V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –2mA IC = –100mA, IB = –10mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max –0.1 –100 0.15–0.05 +0.1 0.3–0 +0.1 Unit µA µA V V V –45 –45 –7 160 – 0.3 80 2.7 460 –.


2005-03-22 : 12CWQ10FN    12H3020-2    12H3040-2    12TQ045S    MI31T    MI31TA    MI32T    MI32T-L    MI32TA    MI33T   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)