BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z z z High forward current transfer ratio hFE Exce...
BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z z z High forward current transfer ratio hFE Excellent HFE Linearity. Complements the 2SD1819A.
Production specification
2SB1218AW
Pb
Lead-free
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APPLICATIONS
z For general purpose amplification.
ORDERING INFORMATION
Type No. 2SB1218AW Marking BQ1/BR1/BS1
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base
Voltage Value -45 Units V
Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current -Continuous
-45 -7 -200
V V mA
Collector Dissipation Junction and Storage Temperature
150 -55~150
mW ℃
Document number: BL/SSSTF034 Rev.A
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BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
Production specification
2SB1218AW
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage
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Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat) fT Cob
Test conditions IC=-10μA,IE=0 IC=-2mA,IB=0 IE=-10μA,IC=0 VCB=-20V,IE=0 VCB=-10V,IB=0 VCE=-10V,IC=-2mA IC=-100mA, IB=-10mA VCB=-10V, IE=1mA f=200MHz VCB=-10V,IE=0,f=1MHz
MIN -45 -45 -7
TYP
MAX
UNIT V V V
Emitter-base breakdown
voltage Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation
voltage Transition frequency Collector output capacitance
-0.1 -100 160 -0.3 80 2.7 ...
