2SB1287

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- :hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A ·Complement to Type 2SD1765 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A Collector Power Dissipation Ta=25℃ 2 PC W Collector Power Dissipation TC=25℃ 20 Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1287 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1287 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA, IB= 0 -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA, IE= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -3 mA hFE DC Current Gain IC= -1A; VCE= -2V 1000 10000 C...