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2SB1317 Datasheet

Part Number 2SB1317
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB1317 Datasheet2SB1317 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SD1975 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier APPLICATIONS ·For high power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB1317 Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VC.

  2SB1317   2SB1317






Part Number 2SB1317
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB1317 Datasheet2SB1317 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SB1317 DESCRIPTION ·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Complement to Type 2SD1975 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 .

  2SB1317   2SB1317







Part Number 2SB1317
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP Transistor
Datasheet 2SB1317 Datasheet2SB1317 Datasheet (PDF)

Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C) Ratings –180 –180 –5 –25 –15 150 3.5 150 –55 to +150 Unit V V V A 26.0±0.5 10.0 1.5 2.0 4..

  2SB1317   2SB1317







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SD1975 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier APPLICATIONS ·For high power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB1317 Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 150 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -15 -25 3.5 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10A ;IB=-1A IC=-8A ; VCE=-5V VCB=-180V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V;f=1MHz IE=0;f=1MHz;VCB=-10V 20 60 20 MIN 2SB1317 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB TYP. MAX -2.5 -1.8 -50 -50 UNIT V V µA µ.


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