2SB1453

DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRAWING (UNIT: mm) FEATURES High DC current amplifier ratio hFE ≥ 100 (VCE = −5 V, IC = −0.5 A) Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings −60 −60 −7.0 −3.0 −6.0 −1.0 25 2.0 150 −55 to +150 Unit V V V A A A W W °C °C Electrode Connection 1. Base 2. Collector 3. Emitter * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16129EJ2V0DS00 (2nd edition) Date Published July 2002 N CP(K) Print...