Part Number | 2SB1567 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain ·Built-in resistor between base and emitter ·Complement to Type... |
Features |
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE
DC Curren... |
Datasheet | 2SB1567 pdf datasheet |
Part Number | 2SB1567 |
Manufacturer | Rohm |
Title | Power Transistor |
Description | 2SB1580 / 2SB1316 / 2SB1567 Transistors Power Transistor (−100V , −2A) 2SB1580 / 2SB1316 / 2SB1567 !Features 1) Darlington connection for high DC. |
Features |
1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980 / 2SD2398. !External dimensions (Units : mm)
2SB1580
1.0
1.5 0.4
4.0 2.5 0.5
(1)
3.0
0.5
(3)
1.5 0.4
1.5
4.5
1.6
(2)
!Absolute m. |
Datasheet | 2SB1567 pdf datasheet |
Part Number | 2SB1567 |
Manufacturer | SavantIC |
Title | SILICON POWER TRANSISTOR |
Description | ·With TO-220F package ·Complement to type 2SD2398 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN 1 . |
Features |
00
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50µA; IE=0
-100
V
VCEsat
Collector-emitter saturation voltage
IC=-1A ; IB=-1mA
-1.5
V
ICBO
Collector cut-off current
VCB=-100V;IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-7V;IC=0
-3.0
mA
hFE
DC current gain
IC=-1A ; VCE=-2V. |
Datasheet | 2SB1567 pdf datasheet |
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