2SB449

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB449 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=50 Open emitter Open base Open collector CONDITIONS VALUE -50 -50 -7 -3.5 22.5 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A; IB=-0.3A IC=-3A; IB=-0.3A VCB=-50V; IE=0 VEB=-7V; IC=0 IC=-3A ; VCE=-2V 20 MIN -50 -50 -7 2SB449 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V -0.7 -1.2 -10 -10 85 V V µA µA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Powe...