SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB541
DESCRIPTION ·W...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB541
DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·For power switching and general purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -110 -110 -6 -8 -3 80 150 -65~150 UNIT V V V A A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown
voltage Collector-base breakdown
voltage Emitter-base breakdown
voltage Collector-emitter saturation
voltage CONDITIONS IC=-50mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A; IB=-0.3A VCB=-110V; IE=0 MIN -110 -110 -6
2SB541
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO
TYP.
MAX
UNIT V V V
-1.5
V
Collector cut-off current
-0.1
mA
IEBO hFE fT
Emitter cut-off current DC current gain Transition frequency
VEB=-6V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V 40 9
-0.1 200
mA
MHz
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB541
Fig.2 ...