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2SB549 Datasheet

Part Number 2SB549
Manufacturers NEC
Logo NEC
Description PNP/NPN Silicon Transistor
Datasheet 2SB549 Datasheet2SB549 Datasheet (PDF)

DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for audio amplifier drivers with 30 W to 50 W output • High voltage • Available for small mount spaces due to small and thin package • Easy to be attached to radiators PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collect.

  2SB549   2SB549






Part Number 2SB549
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB549 Datasheet2SB549 Datasheet (PDF)

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB549 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·With TO-126 package ·Complement to Type 2SD415 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emi.

  2SB549   2SB549







PNP/NPN Silicon Transistor

DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for audio amplifier drivers with 30 W to 50 W output • High voltage • Available for small mount spaces due to small and thin package • Easy to be attached to radiators PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg 2SB548/ 2SD414 −80/80 2SB549/ 2SD415 −100/100 Unit V V V A A W W °C °C Electrode Connection −100/120 −5.0/5.0 −0.8/0.8 −1.5/1.5 1.0 10 150 −55 to +150 * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = −80/80 V, IE = 0 VEB = −3.0/3.0 V, IC = 0 VCE = −5.0/5.0 V, IC = −2.0/2.0 mA* VCE = −5.0/5.0 V, IC = −200/200 mA* IC = −500/500 mA, IB = −50/50 mA* IC = −500/500 mA, IB = −50/50 mA* VCE = −5.0/5.0 V, IC = −100/100 mA VCB = −10/10 V, IE = 0, f = 1.0 MHz 20 40 90 −0.4/0.3 −0.9/0.9 70/45 25/15 320 −2.0/2.0 −1.5/1.5 V V MHz pF MIN. TYP. MAX. −.


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