SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB600
DESCRIPTION ·W...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB600
DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -5 -10 200 150 -55~200 UNIT V V V A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SB600
SYMBOL
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown
voltage
IC=-25mA ;IB=0
-200
V
V(BR)EBO
Emitter-base breakdown
voltage
IE=-1mA ;IC=0
-5
V
VCEsat
Collector-emitter saturation
voltage
IC=-10A; IB=-1A
-1.5
V
VBEsat
Base-emitter saturation
voltage
IC=-10A; IB=-1A
-2.0
V
ICBO
Collector cut-off current
VCB=-200V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-2A ; VCE=-5V
20
fT
Transition frequency
IC=-0.5A ; VCE=-10V
4
MHz
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
P...