2SB654

isc Silicon PNP Power Transistors 2SB654 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Complement to Type 2SD674 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -5A; VCE= -5V  hFE Classifications B C 60-120 100-200 2SB654 MIN TYP. MAX UNIT -100 V -5 V -3.0 V -1.5 V -1 mA 60 200 20 NOTICE： ISC reserves the rights to ...