2SB683

isc Silicon PNP Power Transistor 2SB683 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -4A; VCE= -5V  hFE-1 Classifications C D E 55-110 90-180 150-300 2SB683 MIN TYP. MAX UNIT -100 V -5 V -1.7 V -1.5 V -30 ...