:
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB686
POWER AMPLIFIER APPLICATIONS.
15.9MAX.
Unit in mm
03.2±Q .2
...
:
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB686
POWER AMPLIFIER APPLICATIONS.
15.9MAX.
Unit in mm
03.2±Q .2
FEATURES Complementary to 2SD716. Recommended for 30 ^ 35W High-Fidelity Audio Frequency Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
Collector-Base
Voltage
VCBO
Collector-Emitter
Voltage
VCEO
Emitter-Base
Voltage Collector Current
'EBO ic
Emitter Current
Collector Power DissipFation
~
.
(Tc=25°c:
Junction Temperature
PC
Storage Temperature Range
L stg
RATING -100 -100 -5
60 150 -55VL50
UNIT V
^W,s 4- °[ d =i
+ 0.30
1.0—0.25
w
MM
5.45 ±0.2 5.45±0.2
n° —u
0?
^1
1
Voltage
V (BR) CEO I c=-50mA, I B=0
Emitter-Bas...
