isc Silicon PNP Power Transistor
2SB690
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -80V(Min) ·High...
isc Silicon PNP Power Transistor
2SB690
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO = -80V(Min) ·High Power Dissipation ·Complement to Type 2SD726 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
-100
V
VCEO Collector-Emitter
Voltage
-80
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
40
W
150
℃
Tstg
Storage Temperature Range
-45~150 ℃
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isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -30mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -10μA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On
Voltage
IC= -1A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -0.1A; VCE= -5V
COB
Collector Output Capacitance
IE= 0; VCB= -20V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
hFE-1 Classifications
B
C
60-120 100-200
2SB690
MIN TYP. MAX UNIT
-80
V
-5
V
-2.0
V
-1.5
...