isc Silicon PNP Power Transistor
2SB692
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Good...
isc Silicon PNP Power Transistor
2SB692
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD728 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier and power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-150
V
VCEO
Collector-Emitter
Voltage
-100
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-6
A
70
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
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isc Silicon PNP Power Transistor
2SB692
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -30mA; IB= 0
-100
V
V(BR)CBO Collector-Base Breakdown
Voltage
IC= -1mA; IE= 0
-150
V
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -1mA; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= -4A; IB= -0.4A
-1.5 V
VBE(on) Base -Emitter On
Voltage
IC= -1A; VCE= -5V
-1.5 V
ICBO
Collector Cutoff Current
VCB= -150V; IE=0
-100 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-100 μA
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
40
200
hFE-2
DC Current Gain
IC= -4A; VCE= -5V
20
C...