2SB812

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB812 DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·For audio frequency output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -6 -4 60 150 -40~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A ;IB=-0.3A IC=-1A;VCE=-5V VCB=-60V IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V 40 MIN -60 -60 -6 2SB812 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE TYP. MAX UNIT V V V -1.5 -1.5 -0.1 -0.1 250 V V mA mA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUT...