2SB813

isc Silicon PNP Power Transistor 2SB813 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A ICEO Collector Cutoff Current VCE= -40V; IB= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V 2SB813 MIN TYP. MAX UNIT -60 V -60 V -5 V -1.5 V -100 μA -100 μA 60 200 20 MHz NOTICE： ISC reserves the rights to make changes of the content herein the dat...