2SB868

isc Silicon PNP Power Transistor 2SB868 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -3A ·Complement to Type 2SD960 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -2V hFE-2 DC Current Gain IC= -1A; VCE= -2V  hFE-2 Classifications R Q P 60-120 90-180 130-260 2SB868 MIN TYP. MAX UNIT -80 V -0.5 V -1.5 V -10 μA -50 μA 45 60 260 NOTICE： ISC reserves the right...