TRANSISTOR. 2SB869 Datasheet

2SB869 Datasheet PDF

Part 2SB869
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
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SavantIC Semiconductor www.DataSheet4U.com Product Specific 2SB869 Datasheet
isc Silicon PNP Power Transistor 2SB869 DESCRIPTION ·Colle 2SB869 Datasheet




2SB869
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·Complement to type 2SD961
·Low collector saturation voltage
·High collector current capability
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB869
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Collector dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-130
-80
-7
-5
-10
40
150
-50~150
UNIT
V
V
V
A
A
W



2SB869
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.2A
VBEsat
Base-emitter saturation voltage
IC=-4A; IB=-0.2A
ICBO Collector cut-off current
VCB=-100V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
hFE-2
DC current gain
IC=-2A ; VCE=-2V
fT Transition frequency
IC=-0.5A ; VCE=-10V
Switching times
ton Turn-on time
tstg Storage time
IC=-2A ; IB1=-IB2=-0.2A
tf Fall time
Product Specification
2SB869
MIN TYP. MAX UNIT
-80 V
-0.5 V
-1.5 V
-10 µA
-50 µA
45
60 260
30 MHz
0.13 µs
0.5 µs
0.13 µs
hFE-2 Classifications
RQ
P
60-120
90-180 130-260
2




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