SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB871 2SB871A
DESCRI...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB871 2SB871A
DESCRIPTION ·With TO-220C package ·High speed switching ·Low collector saturation
voltage APPLICATIONS ·For low
voltage switching applications
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER 2SB871 VCBO Collector-base
voltage 2SB871A 2SB871 VCEO Collector-emitter
voltage 2SB871A VEBO IC ICM PC Tj Tstg Emitter-base
voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -40 -5 -10 -20 40 150 -50~150 V A A W Open emitter -50 -20 V CONDITIONS VALUE -40 V UNIT
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SB871 IC=-10mA; IB=0 2SB871A IC=-10A; IB=-0.33A IC=-10A; IB=-0.33A VCB=-40V; IE=0 CONDITIONS SYMBOL
2SB871 2SB871A
MIN -20
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown
voltage
V -40 -0.6 -1.5 V V
VCEsat VBEsat
Collector-emitter saturation
voltage Base-emitter saturation
voltage 2SB871 2SB871A
ICBO
Collector cut-off current
-50 VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-3A ; VCE=-2V IE=0 ; VCB=-10V; f=1MHz IC=-0.5A ; VCE=-10V 45 60 400 100 260 -50
µA
IEBO hFE-1 hFE-2 COB fT
Emitter cut-off current DC current ga...