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2SB874 Transistor Datasheet PDF

Silicon PNP Power Transistor

Silicon PNP Power Transistor

 

 

 

Part Number 2SB874
Description Silicon PNP Power Transistor
Feature isc Silicon PNP Power Transistor 2SB874 DESCRIPTION ·Collector-Emitter Break down Voltage- : V(BR)CEO= -60V(Min) ·L ow Collector Saturation Voltage : VCE(s at)= -1.
0V(Max)@IC= -1.
5A ·Complement to Type 2SD1177 ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation APPLICATIONS · Designed for low frequency power amplif ier applications.
ABSOLUTE MAXIMUM RAT INGS(Ta=25℃) SYMBOL PARAMETER VALU E UNIT VCBO Collector-Base Voltage -1 00 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous - 2 A ICM Collector .
Manufacture Inchange Semiconductor
Datasheet
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2SB874

 

 

 


 

 

 

Part Number 2SB874
Description Silicon PNP Transistor
Feature 2SB874 Silicon PNP Epitaxial Applicatio n Low frequency power amplifier complem entary pair with 2SD1177 Outline TO-22 0AB 1 2 3 1.
Base 2.
Collector (Flan ge) 3.
Emitter Absolute Maximum Rating s (Ta = 25°C) Item Collector to base v oltage Collector to emitter voltage Emi tter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storag e temperature Note: 1.
Value at TC = 25 °C Symbol VCBO VCEO VEBO IC IC(peak) P C* Tj Tstg 1 Rating –100 –60 –5 –2 –3 20 150 –55 to +150 Unit V V V A A W °C °C 2SB874 Electrical Ch aracteristics (Ta = 25°C) Item .
Manufacture Hitachi
Datasheet
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2SB874

 

 

 

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