2SB885

isc Silicon PNP Darlington Power Transistor 2SB885 DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= -2.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SD1195 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature -8 A 35 W 1.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2.5A, IB= -5mA VBE(sat) Base-Emitter Saturation Voltage IC= -2.5A, IB= -5mA ICBO Collector Cutoff Current VCB= -80V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -2.5A; VCE= -3V 2SB885 MIN TYP. MAX UNI...