Ordering number:930C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB892/2SD1207
Large-Current Switching App...
Ordering number:930C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB892/2SD1207
Large-Current Switching Applications
Features
· Power supplies, relay drivers, lamp drivers, and automotive wiring.
Features
· FBET and MBIT processed (Original process of SANYO).
· Low saturation
voltage. · Large current capacity and wide ASO.
Package Dimensions
unit:mm 2006A
[2SB892/2SD1207]
( ) : 2SB892
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Allowable Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT Cob
VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1.5A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz
* : The 2SB892/2SD1207 are graded as follows by hFE at 100mA :
100 R 200 140 S 280 200 T 400 280 U 560
EIAJ : SC-51 SANYO : MP
B : Base C : Collector E : Emitter
Ratings (–)60 (–)50 (–)6 (–)2 (–)4 1 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
100 40 150 12 (22)
max (–)0.1 (–)0.1
560
Unit µA µA
MHz pF pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require ext...