2SB897

isc Silicon PNP Darlington Power Transistor 2SB897 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max.) @IC= 10A ·Complement to Type 2SD1210 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -1.0 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A ,IB= -25mA VBE(sat) Base-Emitter Saturation Voltage IC= -10A ,IB= -25mA ICBO Collector Cutoff current VCB= -100V, IE= 0 IEBO Emitter Cutoff current VEB= -8V, IC= 0 hFE DC Current Gain IC= -10A ; VCE= -2V 2SB897 MIN TYP. MAX UNIT -100 V -1.5 V -2.0 V -10 μA -5 mA 1000 NOTICE： ISC reserves the rights to make chang...