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2SB955 Datasheet

Part Number 2SB955
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description PNP Transistor
Datasheet 2SB955 Datasheet2SB955 Datasheet (PDF)

2SB955(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1126(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 1 2 3 2SB955(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Notes: 1. Value at TC = .

  2SB955   2SB955






Part Number 2SB955
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet 2SB955 Datasheet2SB955 Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor 2SB955 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -5A ·Complement to Type 2SD1126 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Coll.

  2SB955   2SB955







PNP Transistor

2SB955(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1126(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 1 2 3 2SB955(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Notes: 1. Value at TC = 25°C 2. PW ≤ 1 ms 1 shot Symbol VCBO VCEO VEBO IC I C(peak) ID* 1 2 Rating –120 –120 –7 –10 –15 10 50 150 –55 to +150 Unit V V V A A A W °C °C PC * Tj Tstg Electrical Characteristics (Ta = 25°C) Item Symbol Min –120 –7 — — 1000 — — — — — — — Typ — — — — — — — — — — 0.8 4.0 Max — — –100 –10 20000 –1.5 –3.0 –2.0 –3.5 3.0 — — V V V V V µs µs Unit V V µA µA Test conditions I C = –25 mA, RBE = ∞ I E = –200 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 I C = –5 A, IB = –10 mA*1 I C = –10 A, IB = –0.1 A*1 I C = –5 A, IB = –10 mA*1 I C = –10 A, IB = –0.1 A*1 I D = 10 A*1 VCC = –30 V I C = –5 A, IB1 = –IB2 = –10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 .


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