2SB965

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB965 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.55V(Typ)@IC= -4.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD1288 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICP Collector Current-Pulse -10 A PC Total Power Dissipation @ Tc=25℃ 70 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB965 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -4.0A; IB= -0.4A VBE(sat)NOTE Base-Emitter Saturation Voltage IC= -4.0A; IB= -0.4A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 ICBO Collector Cutoff Current VCB= -120V; IE= 0 hFE1NOTE DC Current Gain IC= -1A; VCE= -5V MIN TYP MAX UNIT -0.55 -1.5 V -1.25 -2.0 V -50 μA -50 μA 60 320 hFE2NOTE DC Current Gain IC= -50mA; VCE= -5V 40 fT Transition frequency VCE=-5V ,IC=-1A 75 MHz Cob Collector output cap...