2SC1507

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1507 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated color TV chroma output Circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 200 mA 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1507 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB=5mA 2.0 V ICBO Collector Cutoff Current VCB= 200V ; IE= 0 100 nA IEBO Emitter Cutoff Current VEB= 7V ; IC= 0 100 nA hFE DC Current Gain IC= 10mA ; VCE= 10V 40 240 fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V;ftest= 1.0MHz 80 MHz  hFE Classifications R O Y 40-80 70-140 120-240 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without...