Power Transistors
2SC1567, 2SC1567A
Silicon NPN epitaxial planar type
For low-frequency high power driver Complementary...
Power Transistors
2SC1567, 2SC1567A
Silicon NPN epitaxial planar type
For low-frequency high power driver Complementary to 2SA0794, 2SA0794A
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
3.8±0.3 11.0±0.5
■ Features
3.05±0.1
High collector-emitter
voltage (Base open) VCEO
Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier
TO-126B package which requires no insulation plate for installation to the heat sink
1.9±0.1 16.0±1.0
/ ■ Absolute Maximum Ratings Ta = 25°C
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base
voltage 2SC1567 VCBO
100
V
n d stag tinue (Emitter open)
2SC1567A
120
a e cle con Collector-emitter
voltage 2SC1567 VCEO
100
V
lifecy , dis (Base open)
2SC1567A
120
n u duct typed Emitter-base
voltage (Collector open) VEBO
5
V
te tin Pro ed Collector current
IC
0.5
A
ur tinu Peak collector current
ICP
1
A
ing fo iscon Collector power dissipation
PC
1.2
W
in n follow ed d Junction temperature
Tj
150
°C
s lan Storage temperature
Tstg −55 to +150 °C
0.75±0.1
0.5±0.1
4.6±0.2 2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
a coed inclucdeetype, p ■ Electrical Characteristics Ta = 25°C ± 3°C
M is ntinu tenan Parameter
Symbol
Conditions
Min
isco ain Collector-emitter
voltage 2SC1567 VCEO IC = 100 µA, IB = 0
100
e/D e, m (Base open)
2SC1567A
120
D nanc e typ Emitter-base
voltage (Collector open) VEBO IE = 1 µA, IC = 0
5
inte anc Forward curren...
